050-4968 rev b 12-2013 the vrf2944 is a gold-metallized silicon n-channel rf power transistor de- signed for broadband commercial and military applic ations requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. features ? improved ruggedness v (br)dss = 170v ? 400w with 22db typ. gain @ 30mhz, 50v ? excellent stability & low imd ? common source coniguration ? available in matched pairs ? 70:1 load vswr capability at speciied operating conditions? nitride passivated ? refractory gold metallization ? higher power version of vrf2933 ? thermally enhanced package ? rohs compliant symbol parameter vrf2933(mp) unit v dss drain-source voltage 170 v i d continuous drain current @ t c = 25c 50 a v gs gate-source voltage 40 v p d total device dissipation @ t c = 25c 795 w t stg storage temperature range -65 to 150 c t j operating junction temperature max 200 rf power vertical mosfet maximum ratings all ratings: t c =25 c unless otherwise speciied static electrical characteristics symbol parameter min typ max unit v (br)dss drain-source breakdown voltage (v gs = 0v, i d = 100ma) 170 180 v v ds(on) on state drain voltage (i d(on) = 25a, v gs = 10v) 1.7 2.1 i dss zero gate voltage drain current (v ds = 100v, v gs = 0v) 2.0 ma i gss gate-source leakage current (v ds = 20v, v ds = 0v) 2.0 a g fs forward transconductance (v ds = 10v, i d = 20a) 10 mhos v gs(th) gate threshold voltage (v ds = 10v, i d = 100ma) 2.9 3.6 4.4 v microsemi website - http://www.microsemi.com thermal characteristics symbol characteristic min typ max unit r jc junction to case thermal resistance 0.22 c/w caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. vrf2944 VRF2944MP 50v, 400w, 150mhz d s s g m177 downloaded from: http:///
050-4968 rev b 12-2013 vrf2944(mp) dynamic characteristics symbol parameter test conditions min typ max unit c iss input capacitance v gs = 0v 1050 pf c oss output capacitance v ds = 50v 520 c rss reverse transfer capacitance f = 1mhz 62 functional characteristics symbol parameter min typ max unit g ps f 1 = 30mhz, v dd = 50v, i dq = 250ma, p out = 400w 23 25 db d f 1 = 30mhz, v dd = 50v, i dq = 250ma, p out = 400w 50 % f = 30mhz, v dd = 50v, i dq = 250ma, p out = 400w cw 70:1 vswr - all phase angles, 0.2msec x 20% duty factor no degradation in output power microsemi reserves the right to change, without notice, the speciications and information contained herein. 0 20 40 60 80 100 0 2 4 6 8 10 12 0 10 20 30 40 50 60 70 80 90 0 5 10 15 20 25 30 1 10 100 500 1 10 100 500 10 100 1000 0 10 20 30 40 50 60 70 80 90 100 10,000 c iss v ds(on ) , drain-to-source voltage (v) figure 1, output characteristics i d , drain current (a) i d , drain current (a) t j = 125c v ds , drain-to-source voltage (v) figure 3, capacitance vs drain-to-source voltage c, capacitance (pf) v ds , drain-to-source voltage (v) figure 4, forward safe operating area i d , drain current (a) 5.0v 4.5v v gs , gate-to-source voltage (v) figure 2, transfer characteristics 250s pulse test<0.5 % duty cycle t j = -55c t j = 25c c oss c rss r ds(on) pd max t j = 125c t c = 75c typical performance curves i dmax 4v bvdss line 5.5v 6.0v 6.5v 7.0v 8.0v 100s 1ms 10ms dc line downloaded from: http:///
050-4968 rev b 12-2013 0 0.05 0.10 0.15 0.20 0.25 10 -5 10 -4 10 -3 10 -2 10 1.0 -1 vrf2944(mp) peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : t 1 = pulse duration z jc , thermal impedance (c/w) rectangular pulse duration (seconds) figure 5. maximum effective transient thermal impedance junction-to-case vs pulse duration 0 100 200 300 400 500 600 700 800 0 0.5 1 1.5 2 2.5 3 0 10 20 30 40 50 60 70 80 90 100 0 100 200 300 400 500 600 700 output power (w pep ) p in , input power (watts pep) figure 6. p out versus p in efficiency, % p out , output power (watts pep) figure 7. efficiency versus p in 50v 40v freq=30mhz freq=30mhz 0.3 d = 0.9 0.7 single pulse 0.5 0.1 0.05 50v 40v figure 5b, transient thermal impedance model .0052 dissipated power (watts) t j ( c) t c ( c) z ex t are the external thermal impedances: case to sink, sink to ambient, etc. set to zero when modeling only the case to junction. z ex t .0408 .0981 .071 .0016 .0030 .0133 .0366 20 21 22 23 24 25 26 0 100 200 600 400 500 600 700 gain, db p out , output power (watts pep) figure 7. gain versus p out 60v 50v freq=30mhz 60v 60v 40v downloaded from: http:///
050-4968 rev b 12-2013 30 mhz test circuit vrf2944(mp) table 1 - typical class ab large signal input - output impedance i dq = 100ma z ol - conjugate of optimum load for 400 watts output at v dd =150v freq. (mhz) z in z out 30 4.5 - j 2.5 2.15 - j 2.71 l1 output c3 c11 c12 c10 c6 c7 c8 c9 c1 1200pf atc100b ceramic c2, c3 0.1uf 100v 1206 smt c9-c11 .047uf npo 100v 1218 smt c6 180 pf metal clad mica c7 arco 465 mica trimmer c8 100 pf atc 100e ceramic c4, c12 10uf 100v electrolytic l1 25 nh - 2t #18 0.2"d .2"l l2 26 nh - 1.5t #12 0.31"d2l3 2t #16 on 2x 267300081 .5" bead 5 5 n
: 5
: t1 16:1 transforner 4t #24 teflon on 5 ) 3 d u w v & r 7 w u d q v i r u p h u f r u h t2 9:1 transformer 3t 2-ply #16 teflon on rf parts co. t1 transformer core 30 mhz test circuit vbias r1 r2 l2 rf input c2 t1 c1 r3 l3 t2 + 50v c4 + vrf2944 downloaded from: http:///
050-4968 rev b 12-2013 vrf2944(mp) pin 1 - drain pin 2 - gate pin 3 - source pin 4 - source pin 5 - source m177 (0.63 dia. soe) mechanical data all dimensions are .005 dim min typ max a 0.225 0.230 0.235 b 0.265 0.270 0.275 c 0.860 0.865 0.870 d 1.130 1.135 1.140 e 0.545 0.550 0.555 f 0.003 0.005 0.007 g 0.098 0.103 0.108 h 0.150 0.160 0.170 i 0.280 j 1.080 1.100 1.120 k 0.625 0.630 0.635 f e g h i a b c d ok j .125d nom .135 r seating plane 1 4 2 3 5 adding mp at the end of p/n speciies a matched pair where v gs(th) is matched between the two parts. v th values are marked on the devices per the following table. code vth range code 2 vth range a 2.900 - 2.975 m 3.650 - 3.725 b 2.975 - 3.050 n 3.725 - 3.800 c 3.050 - 3.125 p 3.800 - 3.875 d 3.125 - 3.200 r 3.875 - 3.950 e 3.200 - 3.275 s 3.950 - 4.025 f 3.275 - 3.350 t 4.025 - 4.100 g 3.350 - 3.425 w 4.100 - 4.175 h 3.425 - 3.500 x 4.175 - 4.250 j 3.500 - 3.575 y 4.250 - 4.325 k 3.575 - 3.650 z 4.325 - 4.400 v th values are based on microsemi measurements at datasheet conditions with an accuracy of 1.0%. hazardous material warning: the ceramic portion of the device below the lead plane is beryllium oxide. beryllium oxide dust is highly toxic when inhaled. care must be taken during handling and mounting to avoid damage to this area. these devices must never be thrown away with general industrial or domestic waste. beo substrate weight: 0.703g. percentage of total module weight which is beo: 9%. downloaded from: http:///
050-4968 rev b 12-2013 vrf2944(mp) the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confiden- tial information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the terms of such agreement will also apply . this document and the information contained herein may not be modiied, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an oficer of microsemi. microsemi reserves the right to change the coniguration, functionality and performance of its produc ts at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including li- ability or warranties relating to itness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance speciications believed to be reliable but are not veriied and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers inal application. user or customer shall no t rely on any data and performance speciications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi speciically disclaims any liability of any kind inc luding for consequential, incidental and punitive damages as well as lost proit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp disclaimer: downloaded from: http:///
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